Low temperature deposition of phase change memory materials

摘要

A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

主权项

1. A method of forming a germanium-containing film on a substrate, comprising use of a Ge(II) compound of the formula Ge(Cp(R2)5)2 wherein Cp is cyclopentadienyl having R2 substituents on the cyclopentadienyl ring carbon atoms, wherein the R2 substituents are the same as or different from one another, and each R2 is independently selected from among H, C1-C8 alkyl, C1-C8 fluoroalkyl, C1-C8 alkylamino, C6-C12 aryl, C6-C12 fluoroaryl, C3-C8 cycloalkyl, and C3-C8 cyclo-fluoroalkyl, in chemical vapor deposition or atomic layer deposition.