| 发明名称 | Semiconductor bonding structure and process | ||
| 摘要 | A system and method for bonding semiconductor devices is provided. An embodiment comprises halting the flow of a eutectic bonding material by providing additional material of one of the reactants in a grid pattern, such that, as the eutectic material flows into the additional material, the additional material will change the composition of the flowing eutectic material and solidify the material, thereby stopping the flow. Other embodiments provide for additional layouts to put the additional material into the path of the flowing eutectic material. | ||
| 申请公布号 | US8878355(B2) | 申请公布日期 | 2014.11.04 |
| 申请号 | US201213660374 | 申请日期 | 2012.10.25 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Chang Kuei-Sung;Tsai Nien-Tsung;Wu Ting-Hau;Tsai Yi Heng |
| 分类号 | H01L23/48;H01L23/52;H01L23/02;H01L23/22;H01L23/24 | 主分类号 | H01L23/48 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method for bonding semiconductor devices, the method comprising: patterning a first bonding material into an initiating portion and a halting portion; contacting the initiating portion with a second bonding material to form a eutectic composition; and flowing the eutectic composition to the halting portion, wherein the halting portion changes the composition of the eutectic composition. | ||
| 地址 | Hsin-Chu TW | ||