| 发明名称 | Semiconductor device with an integrated poly-diode | ||
| 摘要 | A field effect semiconductor device includes a semiconductor body having a main horizontal surface and a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type arranged between the first semiconductor region and the main horizontal surface, an insulating layer arranged on the main horizontal surface, and a first metallization arranged on the insulating layer. The first and second semiconductor regions form a pn-junction. The semiconductor body further has a deep trench extending from the main horizontal surface vertically below the pn-junction and including a conductive region insulated from the first semiconductor region and the second semiconductor region, and a narrow trench including a polycrystalline semiconductor region extending from the first metallization, through the insulating layer and at least to the conductive region. A vertical poly-diode structure including a horizontally extending pn-junction is arranged at least partly in the narrow trench. | ||
| 申请公布号 | US8878343(B2) | 申请公布日期 | 2014.11.04 |
| 申请号 | US201313849825 | 申请日期 | 2013.03.25 |
| 申请人 | Infineon Technologies Austria AG | 发明人 | Hirler Franz;Mauder Anton;Pfirsch Frank;Schulze Hans-Joachim |
| 分类号 | H01L29/66;H01L29/78;H01L29/739;H01L29/10;H01L29/417;H01L29/06;H01L29/45;H01L29/49 | 主分类号 | H01L29/66 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A field effect semiconductor device, comprising: a semiconductor body, comprising: a main horizontal surface and a first semiconductor region of a first conductivity type;a second semiconductor region of a second conductivity type arranged between the first semiconductor region and the main horizontal surface, the first semiconductor region and the second semiconductor region forming a pn-junction;an insulating layer arranged on the main horizontal surface;a first metallization arranged on the insulating layer;a deep trench extending from the main horizontal surface vertically below the pn-junction, the deep trench comprising a conductive region insulated from the first semiconductor region and the second semiconductor region;a narrow trench comprising a polycrystalline semiconductor region extending from the first metallization, through the insulating layer and at least to the conductive region; anda vertical poly-diode structure comprising a horizontally extending pn-junction, the vertical poly-diode structure being arranged at least partly in the narrow trench. | ||
| 地址 | Villach AT | ||