Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same

摘要

A structure has at least one field effect transistor having a gate stack disposed between raised source drain structures that are adjacent to the gate stack. The gate stack and raised source drain structures are disposed on a surface of a semiconductor material. The structure further includes a layer of field dielectric overlying the gate stack and raised source drain structures and first contact metal and second contact metal extending through the layer of field dielectric. The first contact metal terminates in a first trench formed through a top surface of a first raised source drain structure, and the second contact metal terminates in a second trench formed through a top surface of a second raised source drain structure. Each trench has silicide formed on sidewalls and a bottom surface of at least a portion of the trench. Methods to fabricate the structure are also disclosed.

主权项

1. A structure comprising:
at least one field effect transistor having a gate stack disposed between raised source drain structures that are adjacent to the gate stack, the gate stack and raised source drain structures being disposed on a surface of a semiconductor material, where the surface of the semiconductor material is a surface of a silicon-on-insulator layer disposed over a layer of buried oxide; a layer of field dielectric overlying the gate stack and raised source drain structures; and first contact metal and second contact metal extending through the layer of field dielectric, the first contact metal terminating in a first trench formed through a top surface of a first raised source drain structure, the second contact metal terminating in a second trench formed through a top surface of a second raised source drain structure, each trench comprising silicide formed on sidewalls and a bottom surface of at least a portion of the trench, where the bottom surface of each trench extends at least to the layer of buried oxide.