Flash memory device and method for manufacturing the same

摘要

The present invention provides a FinFET flash memory device and the method for manufacturing the same. The flash memory device is on an insulating layer, comprising: a first fin and a second fin, wherein the second fin is a control gate of the device; a gate dielectric layer, at side walls and top of the first fin and the second fin; source/drain regions, inside the first fin at both sides of a floating gate.

主权项

1. A flash memory device, which is located on an insulating layer, comprising:
a first fin and a second fin, wherein the second fin is a control gate of the flash memory device, and the first fin is a flash memory channel; a gate dielectric layer located on sidewalls and on top of the first fin and the second fin; a floating gate located on the gate dielectric layer and across the first fin and the second fin; source/drain regions within the first fin which are located on two sides of the floating gate; source and drain contacts located on a contact part of the first fin; one gate contact located on a contact part of the second fin; and wherein there is only one contact which contacts the second fin.