| 发明名称 | Light-emitting device | ||
| 摘要 | A light emitting device comprising: a substrate, wherein the substrate comprises a first major surface, a second major surface opposite to the first major surface, and a sidewall wherein the entire sidewall is a substantially textured surface with a depth of 10˜150 μm; and a light emitting stack layer formed on the substrate. | ||
| 申请公布号 | US8878210(B2) | 申请公布日期 | 2014.11.04 |
| 申请号 | US201313862022 | 申请日期 | 2013.04.12 |
| 申请人 | Epistar Corporation | 发明人 | Hsu Tzu-Chieh |
| 分类号 | H01L33/00;H01L33/22;H01L21/683;H01L23/00;H01L33/20 | 主分类号 | H01L33/00 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. A light emitting device, comprising: a substrate, wherein the substrate comprises a first major surface, a second major surface opposite to the first major surface, and a sidewall wherein the entire sidewall is a substantially textured surface with a depth of between about 50 μm and 150 μm; and a stack of semiconductor epitaxial layers formed on the substrate. | ||
| 地址 | Hsinchu TW | ||