Fin field effect transistors including energy barriers

摘要

A semiconductor device structure includes a transistor with an energy barrier beneath its transistor channel. The energy barrier prevents leakage of stored charge from the transistor channel into a bulk substrate. Methods for fabricating semiconductor devices that include energy barriers are also disclosed.

主权项

1. A fin field effect transistor, comprising:
a fin including:
a base comprising a protruding region of an energy barrier consisting essentially of carbonated silicon; anda top comprising semiconductor material on the base, side walls of the top substantially coplanar with side walls of the base; a gate dielectric coating at least a portion of the fin; and a gate electrode on the gate dielectric.