| 发明名称 |
Non-volatile memory (NVM) with variable verify operations |
| 摘要 |
A method of erasing a non-volatile memory (NVM) array includes determining a first number based on a temperature of the NVM array. Erase pulses of the first number are applied to the NVM array. A first verify of the NVM is performed for a first time after commencing the applying after the first number has been reached. |
| 申请公布号 |
US8879330(B1) |
申请公布日期 |
2014.11.04 |
| 申请号 |
US201313874119 |
申请日期 |
2013.04.30 |
| 申请人 |
Freescale Semiconductor, Inc. |
发明人 |
Mu Fuchen;Wang Yanzhuo |
| 分类号 |
G11C11/34;G11C16/34 |
主分类号 |
G11C11/34 |
| 代理机构 |
|
代理人 |
Bertani Mary Jo;Clingan, Jr. James L. |
| 主权项 |
1. A method of erasing a non-volatile memory (NVM) array, comprising:
determining a first number based on a temperature of the NVM array; applying erase pulses of the first number to the NVM array; and performing a first verify of the NVM for a first time after commencing the applying after the first number has been reached. |
| 地址 |
Austin TX US |
