Semiconductor structure having a silver alloy bump body and manufacturing method thereof

摘要

The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a conductive pad on a semiconductor die; forming a seed layer over the conductive pad; defining a first mask layer over the seed layer; and forming a silver alloy bump body in the first mask layer. The forming a silver alloy bump body in the first mask layer includes operations of preparing a first cyanide-based bath; controlling a pH value of the first cyanide-based bath to be within a range of from about 6 to about 8; immersing the semiconductor die into the first cyanide-based bath; and applying an electroplating current density of from about 0.1 ASD to about 0.5 ASD to the semiconductor die.

主权项

1. A method for manufacturing a semiconductor structure, comprising:
forming a conductive pad on a semiconductor die; forming a seed layer over the conductive pad; defining a first mask layer over the seed layer; and forming a silver alloy bump body in the first mask layer, comprising:
preparing a first cyanide-based bath;controlling a pH value of the first cyanide-based bath to be within a range of from about 6 to about 8;immersing the semiconductor die into the first cyanide-based bath; andapplying an electroplating current density of from about 0.1 ASD to about 0.5 ASD to the semiconductor die,wherein the preparing the first cyanide-based bath comprises introducing KAg(CN)2 and salts thereof into the first cyanide-based bath.