Semiconductor device having improved RF characteristics and moisture resistance and method for manufacturing the same

摘要

A semiconductor device includes: a semiconductor substrate having a main surface; an electrode in a device region on the main surface; a metal wiring on the main surface and having a first end connected to the electrode; an electrode pad outside the device region and spaced from the metal wiring; an air gap between the main surface and an air gap forming film on the main surface, enveloping the first end of the metal wiring and the electrode, and having a first opening; a resin closing the first opening and covering a second end of the metal wiring; a liquid repellent film facing the air gap and increasing contact angle of the resin, when liquid, relative to contact angles on the semiconductor substrate and the air gap forming film; and a metal film connecting the metal wiring to the electrode pad through a second opening located in the resin.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having a main surface; an electrode in a device region of the semiconductor substrate, on the main surface of the semiconductor substrate; a metal wiring on the main surface of the semiconductor substrate and having a first end connected to the electrode and a second end; an electrode pad outside the device region on the main surface of the semiconductor substrate and spaced from the metal wiring; an air gap forming film on the main surface of the semiconductor substrate; an air gap between a part of the main surface of the semiconductor substrate and the air gap forming film, enveloping the first end of the metal wiring and the electrode, and having a first opening; a resin closing the first opening and covering the second end of the metal wiring, without covering the electrode pad; a liquid repellent film on an internal surface facing the air gap and increasing contact angle of the resin, when in a liquid state, relative to contact angles on the semiconductor substrate and the air gap forming film; and a metal film connecting the metal wiring to the electrode pad through a second opening located in the resin, wherein the second end of the metal wiring does not jut out of the resin.