发明名称 |
Enhanced semiconductor devices employing photoactive organic materials and methods of manufacturing same |
摘要 |
Methods and apparatus provide for a transistor, including: a semiconductor layer including molecules, protons, and/or ions, etc. diffused therein from a photoactive material; a channel disposed on or in the semiconductor layer; a source disposed on or in the semiconductor layer; a drain disposed on or in the semiconductor layer; and a gate electrically coupled to the semiconductor layer. |
申请公布号 |
US8877546(B2) |
申请公布日期 |
2014.11.04 |
申请号 |
US201012790113 |
申请日期 |
2010.05.28 |
申请人 |
Corning Incorporated |
发明人 |
Fong Hon Hang;He Mingqian |
分类号 |
H01L51/40;H01L51/00;H01L51/05 |
主分类号 |
H01L51/40 |
代理机构 |
|
代理人 |
Barron Jason A. |
主权项 |
1. A method of forming a transistor, comprising:
forming a channel on or in a semiconductor layer, wherein the semiconductor layer comprises an organic semiconductor and a separate organic photoactive material; and exposing the photoactive material to light such that molecules, protons, and/or ions diffuse through the channel from the photoactive material; disposing one or more of a source, a drain, and a gate doped with the photoactive material in the semiconductor layer; and exposing the source, the gate, and/or the drain to light such that molecules, protons, and/or ions diffuse into the channel from the photoactive material. |
地址 |
Corning NY US |