发明名称 Enhanced semiconductor devices employing photoactive organic materials and methods of manufacturing same
摘要 Methods and apparatus provide for a transistor, including: a semiconductor layer including molecules, protons, and/or ions, etc. diffused therein from a photoactive material; a channel disposed on or in the semiconductor layer; a source disposed on or in the semiconductor layer; a drain disposed on or in the semiconductor layer; and a gate electrically coupled to the semiconductor layer.
申请公布号 US8877546(B2) 申请公布日期 2014.11.04
申请号 US201012790113 申请日期 2010.05.28
申请人 Corning Incorporated 发明人 Fong Hon Hang;He Mingqian
分类号 H01L51/40;H01L51/00;H01L51/05 主分类号 H01L51/40
代理机构 代理人 Barron Jason A.
主权项 1. A method of forming a transistor, comprising: forming a channel on or in a semiconductor layer, wherein the semiconductor layer comprises an organic semiconductor and a separate organic photoactive material; and exposing the photoactive material to light such that molecules, protons, and/or ions diffuse through the channel from the photoactive material; disposing one or more of a source, a drain, and a gate doped with the photoactive material in the semiconductor layer; and exposing the source, the gate, and/or the drain to light such that molecules, protons, and/or ions diffuse into the channel from the photoactive material.
地址 Corning NY US