Method and apparatus for programming a spin-transfer torque magnetic random access memory (STTMRAM) array

摘要

A spin-transfer torque memory random access memory (STTMRAM) cell is disclosed comprising a selected magnetic tunnel junction (MTJ) identified to be programmed; a first transistor having a first port, a second port and a gate, the first port of the first transistor coupled to the selected MTJ; a first neighboring MTJ coupled to the selected MTJ through the second port of the first transistor; a second transistor having a first port, a second port, and a gate, the first port of the second transistor coupled to the selected MTJ; a second neighboring MTJ coupled to the selected MTJ through the second port of the second transistor; a first bit/source line coupled to the second end of the selected MTJ; and a second bit/source line coupled to the second end of the first neighboring MTJ and the second end of the second neighboring MTJ.

主权项

1. A spin-transfer torque magnetic random access memory (STTMRAM) array comprising:
a selected magnetic tunnel junction (MTJ) to be programmed by switching the state thereof upon application of a switching current, the selected MTJ coupled to a first transistor and a second transistor; a first neighboring MTJ coupled to the first transistor; and a second neighboring MTJ coupled to the second transistor, wherein during programming of the selected MTJ, a first current flows through the first transistor and a second current flows through the second transistor and the first current is equal to or less than twenty five percent (25%) of the second current.