Method for manufacturing SOI substrate

摘要

To suppress desorption of hydrogen ions with which a single crystal semiconductor substrate is irradiated. A method for manufacturing an SOI substrate includes the following steps: irradiating a semiconductor substrate with carbon ions; irradiating the semiconductor substrate with a hydrogen ion after the irradiation with the carbon ion so as to form an embrittled region in the semiconductor substrate; disposing a surface of the semiconductor substrate and a surface of a base substrate to face each other and to be in contact with each other so that the semiconductor substrate and the base substrate are bonded; and heating the semiconductor substrate and the base substrate which are bonded to each other and separating the semiconductor substrate along the embrittled region so that a semiconductor layer is formed over the base substrate.

主权项

1. A method for manufacturing an SOI substrate, comprising the steps of:
irradiating a semiconductor substrate with a carbon ion; irradiating the semiconductor substrate with a hydrogen ion after irradiation with the carbon ion to form an embrittled region in the semiconductor substrate; disposing a surface of the semiconductor substrate and a surface of a base substrate to face each other so that the semiconductor substrate and the base substrate are bonded; and separating the semiconductor substrate along the embrittled region to form a semiconductor layer over the base substrate, wherein a maximum value of a carbon concentration and a maximum value of a hydrogen concentration in the semiconductor substrate are located at a same depth.