Display device and method for manufacturing the same

摘要

An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

主权项

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming an oxide semiconductor layer over an insulating layer; forming a source electrode layer and a drain electrode layer over and in contact with a first region of the oxide semiconductor layer; forming an oxide insulating layer over and in contact with a second region of the oxide semiconductor layer; and performing a heat treatment on the oxide insulating layer so that oxygen in the oxide insulating layer is supplied to the second region of the oxide semiconductor layer, wherein a conductivity of the first region of the oxide semiconductor layer is higher than a conductivity of the second region of the oxide semiconductor layer.