High-frequency amplifier

摘要

According to one embodiment, a high-frequency amplifier is provided with a field effect transistor for performing amplification, and a stabilizing circuit. The field effect transistor has a source which is configured to be grounded. The stabilizing circuit is connected to a gate of the field effect transistor. The stabilizing circuit has impedance which changes so as to increase as the voltage of a drain of the field effect transistor increases.

主权项

1. A high-frequency amplifier comprising:
a first field effect transistor for performing amplification, a source of the first field effect transistor is configured to be grounded; and a stabilizing circuit connected to a gate of the first field effect transistor, the stabilizing circuit having an impedance which changes so as to increase as a voltage of a drain of the first field effect transistor increases, wherein the stabilizing circuit is provided with first and second capacitors, at least one second field effect transistor, and a resistor, one end of the first capacitor is connected to the gate of the first field effect transistor, a drain of the second field effect transistor is connected to the other end of the first capacitor, a gate of the second field effect transistor is grounded, a source of the second field effect transistor is connected to the drain of the first field effect transistor, one end of the resistor is grounded and the other end of the resistor is connected to the source of the second field effect transistor, one end of the second capacitor is grounded, and the other end of the second capacitor is connected to the source of the second field effect transistor in parallel with the resistor.