Copper interconnects having a titanium—titanium nitride assembly between copper and compound semiconductor

摘要

Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a first titanium (Ti) layer disposed over a compound semiconductor, a first titanium nitride (TiN) layer disposed over the first Ti layer, and a copper (Cu) layer disposed over the first TiN layer. The first Ti layer and the first TiN layer can be configured as a barrier between the Cu layer and the compound semiconductor. The metalized structure can further include a second TiN layer disposed over the Cu layer and a first platinum (Pt) layer disposed over the second TiN layer.

主权项

1. A metalized structure for a compound semiconductor device, the structure comprising:
a first titanium (Ti) layer disposed over a substrate associated with the compound semiconductor device; a first titanium nitride (TiN) layer disposed over the first Ti layer; and a copper (Cu) layer disposed over the first TiN layer, the thickness of the first TiN layer being selected to provide sufficient barrier functionality between the Cu layer and an ohmic metal layer disposed between the first Ti layer and the substrate.