Solid-state image sensor and imaging system

摘要

At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.

主权项

1. A solid-state image sensor comprising:
a substrate; a light-receiving section arranged in the substrate; a plurality of wiring layers and a plurality of interlayer insulating layers arranged above the substrate; a first layer comprising Si and O and a second layer comprising Si and N, the both layer arranged between the light-receiving section and the plurality of wiring layers and the plurality of interlayer insulating layers; a third layer comprising Si, N and O above an upper most interlayer insulating layer of the plurality of interlayer insulating layers, and a fourth layer comprising Si and N, arranged above the third layer and has a concentration of N more than that in the third layer.