Semiconductor-graphene hybrids formed using solution growth

摘要

A novel method for fabrication of hybrid semiconductor-graphene nanostructures in large scale by floating graphene sheets on the surface of a solution is provided. Using this approach, crystalline ZnO nano/micro-rod bundles on graphene fabricated using chemical vapor deposition were prepared. UV detectors fabricated using the as-prepared hybrid ZnO-graphene nano-structure with graphene being one of the two electrodes show high sensitivity to ultraviolet light, suggesting the graphene remained intact during the ZnO growth. This growth process provides a low-cost and robust scheme for large-scale fabrication of semiconductor nanostructures on graphene and may be applied for synthesis of a variety of hybrid semiconductor-graphene nano-structures demanded for optoelectronic applications including photovoltaics, photodetection, and photocatalysis.

主权项

1. A seedless method for forming a semiconductor-graphene hybrid:
forming a graphene sheet on a support to form a supported graphene sheet having a graphene face; exposing said supported graphene sheet to a solution comprising a semiconductor metal ion at a temperature below 100° C. and under ambient air pressure for a time so that said semiconductor grows on said graphene sheet, and wherein said exposing occurs without seeding said graphene sheet.