Resistance variable memory device with nanoparticle electrode and method of fabrication

摘要

A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.

主权项

1. A memory device, comprising:
a first electrode and a second electrode; a chalcogenide material memory element comprising a chalcogenide glass material between the first electrode and the second electrode; and a nanoparticle between the first electrode and at least a portion of the chalcogenide material memory element, wherein the nanoparticle has a curved surface contacting the chalcogenide material memory element, and wherein the chalcogenide glass material is in physical contact with both the nanoparticle and the first electrode and the nanoparticle is separated from the second electrode by at least a portion of the chalcogenide glass material.