发明名称 Systems, methods and devices for limiting current consumption by a different ramp rate upon power-up
摘要 Embodiments are described including those for controlling peak current consumption of a multi-chip memory package during power-up. In one embodiment, each memory device of the multi-chip package includes a power level detector used to compare an internal voltage signal to a threshold. A current limiter controls the ramping rate of the internal voltage signal in response to the power level detector as the internal voltage signal ramps up towards the threshold.
申请公布号 US8880920(B2) 申请公布日期 2014.11.04
申请号 US201113078771 申请日期 2011.04.01
申请人 Micron Technology, Inc. 发明人 Lee June
分类号 G06F1/00;G11C16/30;G11C5/14 主分类号 G06F1/00
代理机构 Dorsey & Whitney LLP 代理人 Dorsey & Whitney LLP
主权项 1. A memory package, comprising: a plurality of memory devices, wherein each of the plurality of memory devices is configured to receive an external power supply signal and generate an internal power supply signal based in part on the external power supply signal, wherein each of the plurality of memory devices are configured to store respective configuration parameters, and wherein each of the plurality of memory devices includes a power-up circuit comprising: a current limiter configured to regulate current consumption when the internal power supply signal has a magnitude less than a threshold by ramping the internal signal at a first rate;a voltage regulator configured to regulate the internal power supply signal when the internal power supply signal has a magnitude greater than the threshold including ramping the internal signal at a second rate that is greater than the first rate responsive to the internal power supply signal equaling the threshold, wherein at least one of the first rate or the second rate are retrieved from the respective configuration parameters; and wherein the first rate used by the current limiter of one of the plurality of memory devices to ramp up the internal power supply signal is different than the first rate used by the current limiter of another of the plurality of memory devices.
地址 Boise ID US