Phase change memory word line driver

摘要

A method for improving sub-word line response comprises generating a variable substrate bias determined by at least one user parameter. The variable substrate bias is applied to a sub-word line driver in a selected sub-block of a memory. A voltage disturbance on a sub-word line in communication with the sub-word line driver is minimized by modifying a variable substrate bias of the sub-word line driver to change a transconductance of the sub-word line driver thereby.

主权项

1. A method for improving sub-word line response comprising:
generating a variable substrate bias; applying the variable substrate bias to a sub-word line driver in a selected sub-block of a memory during a write operation; applying a bias of Vss to sub-word line drivers in the remaining sub-blocks of the memory; and modifying a variable substrate bias of the sub-word line driver depending on at least one user parameter.