| 发明名称 | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same | ||
| 摘要 | In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (“CNT”) material above the substrate, wherein the CNT material comprises a single CNT. Numerous other aspects are provided. | ||
| 申请公布号 | US8878235(B2) | 申请公布日期 | 2014.11.04 |
| 申请号 | US201113235409 | 申请日期 | 2011.09.18 |
| 申请人 | SanDisk 3D LLC | 发明人 | Schricker April D.;Chien Wu-Yi;Hou Kun;Makala Raghuveer S.;Zhang Jingyan;Nian Yibo |
| 分类号 | H01L27/08;H01L29/96;H01L21/332;B82Y10/00;H01L45/00;H01L27/10;H01L27/24;G11C13/00;G11C5/02;G11C11/54;B82Y20/00;G11C13/02 | 主分类号 | H01L27/08 |
| 代理机构 | Dugan & Dugan, PC | 代理人 | Dugan & Dugan, PC |
| 主权项 | 1. A method of fabricating a memory cell comprising: fabricating a steering element in the form of a pillar structure above a substrate; and fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (“CNT”) material above the substrate, wherein: the CNT material comprises a single CNT that includes both the steering element and the reversible resistance-switching element, and the pillar structure has a width of less than about 10 nanometers. | ||
| 地址 | Milpitas CA US | ||