| 发明名称 | Surface treatment in the formation of interconnect structure | ||
| 摘要 | A Ultra-Violet (UV) treatment is performed on an exposed surface of a low-k dielectric layer and an exposed surface of a metal line. After the UV treatment, an organo-metallic soak process is performed on the exposed surface of the low-k dielectric layer and the exposed surface of the metal line. The organo-metallic soak process is performed using a process gas including a metal bonded to an organic group. | ||
| 申请公布号 | US8877083(B2) | 申请公布日期 | 2014.11.04 |
| 申请号 | US201213679858 | 申请日期 | 2012.11.16 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Chou Chia-Cheng;Chen Mei-Ling;Yang Hui-Chun;Shih Po-Cheng;Liou Joung-Wei;Jeng Shwang-Ming |
| 分类号 | B44C1/22;H01L21/302;H01L21/306 | 主分类号 | B44C1/22 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method comprising: performing a Ultra-Violet (UV) treatment on an exposed surface of a low-k dielectric layer and an exposed surface of a metal line; and after the UV treatment, performing an organo-metallic soak process on the exposed surface of the low-k dielectric layer and the exposed surface of the metal line, wherein the organo-metallic soak process is performed using a process gas comprising a metal bonded to an organic group. | ||
| 地址 | Hsin-Chu TW | ||