CMOS RF switch device and method for biasing the same

摘要

Disclosed are CMOS-based devices for switching radio frequency (RF) signals and methods for biasing such devices. In certain RF devices such as mobile phones, providing different amplification modes can yield performance advantages. For example, a capability to transmit at low and high power modes typically results in an extended battery life, since the high power mode can be activated only when needed. Switching between such amplification modes can be facilitated by one or more switches formed in an integrated circuit and configured to route RF signal to different amplification paths. In certain embodiments, such RF switches can be formed as CMOS devices, and can be based on triple-well structures. In certain embodiments, an isolated well of such a triple-well structure can be provided with different bias voltages for on and off states of the switch to yield desired performance features during switching of amplification modes.

主权项

1. A circuit for amplifying radio frequency signals, the circuit comprising:
a first circuit configured to amplify a radio frequency (RF) signal so as to provide a first gain; a second circuit configured to amplify the RF signal so as to provide a second gain; first and second switches formed as complementary metal oxide semiconductor (CMOS) devices and each including a source and a drain, a gate between the source and the drain, and a first well formed about the source and drain; and a control component configured to control application of first and second bias voltages to the first well of the first switch, the first and second bias voltages for the first well of the first switch being different and corresponding to first and second states of the first switch, respectively, the control component further configured to control application of third and fourth bias voltages to the first well of the second switch, the third and fourth bias voltages for the first well of the second switch being different and corresponding to first and second states of the second switch, respectively, at least the combination of the first state of the first switch and the second state of the second switch resulting in the RF signal being amplified by the first circuit, and at least the combination of the second state of the first switch and the first state of the second switch resulting in the RF signal being amplified by the second circuit.