| 摘要 |
<p>A gas barrier film including a substrate of which the surface is formed of an organic material; an inorganic film which is formed on the substrate and contains silicon nitride; and a mixed layer which is formed in an interface between the substrate and the inorganic film, and contains components derived from the organic material and the inorganic film, wherein a compositional ratio N/Si between nitrogen and silicon contained in the inorganic film is 1.00 to 1.35, the inorganic film has a film density of 2.1 g/cm3 to 2.4 g/cm3 and a film thickness of 10 nm to 60 nm, and the mixed layer has a thickness of 5 nm to 40 nm.</p> |
