发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要 <p>A semiconductor device and a method for manufacturing the same are provided. In the present invention, contact residues generated when forming a contact hole is in contact with a protection layer instead of a mold layer. The protection layer prevents the reaction between the contact residues and the mold layer. Thereby, the leakage current between the lower electrodes can be prevented.</p>
申请公布号 KR20140126915(A) 申请公布日期 2014.11.03
申请号 KR20130045183 申请日期 2013.04.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YANG, SANG RYOL;JUNG, SOON WOOK;KIM, KYOUNG SEOB;YOU, YOUNG SUB;CHUNG, BYUNG HONG;CHOI, HAN MEI
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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