SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要
<p>A semiconductor device and a method for manufacturing the same are provided. In the present invention, contact residues generated when forming a contact hole is in contact with a protection layer instead of a mold layer. The protection layer prevents the reaction between the contact residues and the mold layer. Thereby, the leakage current between the lower electrodes can be prevented.</p>
申请公布号
KR20140126915(A)
申请公布日期
2014.11.03
申请号
KR20130045183
申请日期
2013.04.24
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
YANG, SANG RYOL;JUNG, SOON WOOK;KIM, KYOUNG SEOB;YOU, YOUNG SUB;CHUNG, BYUNG HONG;CHOI, HAN MEI