| 摘要 |
<p>The purpose of the present invention is to provide a semiconductor device capable of forming a conductive layer having no defect on a substrate surface, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate (10) which is hexagonal crystal and has a (0001) surface, and multiple conductive layers (12) formed on the surface of the substrate. The conductive layers have a first conductive layer (14) of a crystal structure which has no plane surface which has symmetry equal to atom arrangement in the substrate surface of the substrate, and a second conductive layer (16) of a crystal structure which is formed on an upper part of the first conductive layer and having at least one plane surface having symmetry equal to atom arrangement in the substrate surface of the substrate. The second conductive layer is poly crystal having a diameter of 15μm or less.</p> |
