| 摘要 |
<p>A method for growing an ingot according to an embodiment of the present invention is a method for growing a single crystalline ingot from a melt silicon solution accommodated inside a crucible which is rotated and ascended. The ingot is ascended in a velocity, wherein the rate (PS/dx) of ascending velocity (PS) of the ingot to a super cooling zone length (dx) measured from the melt silicon solution is maintained above 0.5.</p> |
