| 摘要 |
<p>Protrusions 2 each having a shape of a pyramid or a truncated pyramid are regularly arranged on a growing face 1a of a seed crystal 1 composed of gallium nitride single crystal. It is formed a gallium nitride crystal layer 4 having a thickness of 100μm or smaller by flux method directly on the growing face 1a of the seed crystal.</p> |
