| 摘要 |
The present invention relates to a sputtering apparatus and a deposition apparatus including the same. According to the present invention, the sputtering apparatus comprises: a main sputter gun arranged to oppose a substrate; secondary sputter guns installed on both sides of the main sputter gun; a target mounted on the main sputter gun and the secondary sputter guns, and arranged to face each other; and a magnet part installed in the main sputter gun and the secondary sputter guns to form a magnetic field. Moreover, the target sputtered by plasma generated in a space between the targets can proceed in the inclined direction to cross each other with respect to the substrate. According to the present invention, when a thin film layer of a multilayered structure is formed, the number of processes can be reduced and the costs necessary for process equipment can be reduced. |
