FORMING METHOD FOR PASSIVATION FILM AND MANUFACTURING METHOD FOR ALGAN/GAN HFET INCLUDING THE FORMING METHOD

摘要

The present invention relates to a method for forming a passivation film to improve an electrical property of a GaN system semiconductor device. The method for forming the passivation film comprises: a step of forming a primary passivation film on the surface; a step of forming an ohmic electrode which penetrates the primary passivation film; a step of eliminating the primary passivation film; a step of forming a GaOx sacrificial layer on the surface in which the first passivation film is eliminated and eliminating the GaOx sacrificial layer; and a step of forming a secondary passivation film on the surface in which the GaOx sacrificial layer is eliminated. The present invention improves the quality of a surface in which the secondary passivation film is in contact with the surface in which the first passivation film is eliminated by executing a process of forming the GaOx sacrificial layer on the surface in which the first passivation film is eliminated, and eliminating the GaOx sacrificial layer. An AlGaN/GaN HFET which is manufactured with a method including a passivation film forming method of the present invention has no current collapse phenomenon and shows an excellent performance in a high voltage and reduces a leakage current.