A semiconductor device comprises: first conductive patterns connected to a common source of a memory block and select lines formed on a substrate; second conductive patterns for forming bit lines connected to the memory block; and third conductive patterns for transmitting a block selection signal to connect local lines and global lines of the memory block. The first to third conductive patterns are disposed on different layers on the top of the memory block.
申请公布号
KR20140126503(A)
申请公布日期
2014.10.31
申请号
KR20130044742
申请日期
2013.04.23
申请人
SK HYNIX INC.
发明人
SON, CHANG MAN;LEE, CHANG HYUK;LEE, GO HYUN;BAEK, KWANG HO