| 摘要 |
This invention relates to semiconductor technology and can be used for manufacturing solar radiation-to-electric energy converters.The pInP-nCdS structure growth method comprises placing a pre-etched pInP substrate with the crystallographic orientation (100) and disorientation of 3…5° in the direction (110) into a reactor, heating the substrate growth zone and stabilizing the temperature in the range of 400…450°C, spraying, in open oxygen flow, the CdCl2 and SnSl4 solutions with the formation on the substrate of a Cd2SnO4 layer, then spraying the CdCl2 and CS(NH2)2 solutions with the formation thereon of a nCdS layer. |
