SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

Provided are a semiconductor device, which can facilitate a salicide process and can prevent a gate from being damaged due to misalign, and a method of manufacturing of the semiconductor device. The method includes forming a first insulation layer pattern on a substrate having a gate pattern and a source/drain region formed at both sides of the gate pattern, the first insulation layer pattern having an exposed portion of the source/drain region, forming a silicide layer on the exposed source/drain region, forming a second insulation layer on the entire surface of the substrate to cover the first insulation layer pattern and the silicide layer, and forming a contact hole in the second insulation layer to expose the silicide layer.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming, on a substrate, a source/drain region on substantially opposing sides of a gate pattern that is on the substrate; forming a first insulation layer pattern on the substrate, the first insulation layer pattern including an exposed portion of the source/drain region; forming a silicide layer on the exposed portions of the source/drain region by depositing at least one metal layer on the exposed portion of the source/drain region to react with the source/drain region; forming a second insulation layer on the surface of the substrate to cover the first insulation layer pattern and the silicide layer; forming a contact hole in the second insulation layer by etching the second insulation layer to expose the silicide layer; and forming a metal wire contact by filling the contact hole with conductive material.