| 发明名称 |
EPITAXIAL WAFER, METHOD FOR PRODUCING THE SAME, SEMICONDUCTOR ELEMENT, AND OPTICAL SENSOR DEVICE |
| 摘要 |
An epitaxial wafer of the present invention includes a substrate composed of a III-V compound semiconductor, a multiple quantum well structure composed of a III-V compound semiconductor and located on the substrate, and a top layer composed of a III-V compound semiconductor and located on the multiple quantum well structure. The substrate has a plane orientation of (100) and an off angle of −0.030° or more and +0.030° or less, and a surface of the top layer has a root-mean-square roughness of less than 10 nm. |
| 申请公布号 |
US2014319463(A1) |
申请公布日期 |
2014.10.30 |
| 申请号 |
US201414260110 |
申请日期 |
2014.04.23 |
| 申请人 |
Sumitomo Electric Industries, Ltd. |
发明人 |
FUJII Kei;SHIBATA Kaoru;AKITA Katsushi |
| 分类号 |
H01L31/0352;H01L31/0304;H01L31/0236;H01L31/18 |
主分类号 |
H01L31/0352 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An epitaxial wafer comprising:
a substrate composed of a III-V compound semiconductor; a multiple quantum well structure composed of a III-V compound semiconductor and located on the substrate; and a top layer composed of a III-V compound semiconductor and located on the multiple quantum well structure, wherein the substrate has a plane orientation of (100) and an off angle of −0.030° or more and +0.030° or less, and a surface of the top layer has a root-mean-square roughness of less than 10 nm. |
| 地址 |
Osaka-shi JP |
