SEMICONDUCTOR LIGHT EMITTING APPARATUS

摘要

A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.

主权项

1. A semiconductor light emitting apparatus, comprising:
a first semiconductor layer of a first conductivity type; a light emitting layer formed on the first semiconductor layer; a second semiconductor layer of a second conductivity type opposite to the first conductivity type, formed on the light emitting layer and having an upper surface; recess formed from the upper surface of the second semiconductor layer, penetrating through the second semiconductor layer and the light emitting layer and exposing the first semiconductor layer at bottom; a first electrode electrically connected to the first semiconductor layer at the bottom of the recess and extending upward to extend above the upper surface of the second semiconductor layer; a second electrode electrically connected to the upper surface of the second semiconductor layer and having an opening which surrounds the recess in plan view and through which the first electrode extends from the inside of the recess to above the upper surface of the second semiconductor layer; and an insulating layer disposed between the first and second electrodes above the upper surface of the second semiconductor layer; wherein the second electrode constitute a reflective electrode that reflects light incident from the light emitting layer side, wherein the first electrode includes a reflective electrode layer formed covering the opening in plan view, that reflects light incident from the light emitting layer side, and wherein the reflective electrode layer of the first electrode has a peripheral portion overlapping a peripheral portion of the second electrode defining the opening in plan view.