SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME

摘要

Provided is a semiconductor element and the like having high quantum efficiency or sensitivity in the near-infrared to infrared region. The semiconductor element comprises: a substrate; a plurality of pairs of multi-quantum well structures located on the substrate with each pair comprising a layer a and a layer b; and a crystal adjustment layer located between the substrate and the multi-quantum well structures. The crystal adjustment layer includes a first adjustment layer constituted by the same material as the substrate and kept in contact with the substrate, and a second adjustment layer constituted by the same material as the layer a or the layer b in the multi-quantum well structure and kept in contact with the multi-quantum well structure.