发明名称 MAGNETIC MATERIAL SPUTTERING TARGET AND MANUFACTURING METHOD FOR SAME
摘要 A magnetic material sputtering target characterized in that, in a plane for observing the oxide in the target, oxide grains in the target have an average diameter of 1.5 μm or less, and that 60% or more of the oxide grains in the observing plane of the target have a difference between a maximum diameter and a minimum diameter of 0.4 μm or less, where the maximum diameter is a maximum distance between arbitrary two points on the periphery of an oxide grain, and the minimum diameter is a minimum distance between two parallel lines across the oxide grain. A non-magnetic grain dispersion-type magnetic material sputtering target that can inhibit abnormal discharge due to an oxide causing occurrence of particles during sputtering is obtained.
申请公布号 SG11201404314W(A) 申请公布日期 2014.10.30
申请号 SG11201404314W 申请日期 2013.02.15
申请人 JX NIPPON MINING & METALS CORPORATION 发明人 ARAKAWA ATSUTOSHI;TAKAMI HIDEO;NAKAMURA YUICHIRO
分类号 C23C14/34;G11B5/64;G11B5/851 主分类号 C23C14/34
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