| 发明名称 |
METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTOR |
| 摘要 |
A method for fabricating a metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a silicon layer on the semiconductor substrate; performing a first photo-etching process on the silicon layer for forming a gate pattern; forming an epitaxial layer in the semiconductor substrate adjacent to two sides of the gate pattern; and performing a second photo-etching process on the gate pattern to form a slot in the gate pattern while using the gate pattern to physically separate the gate pattern into two gates. |
| 申请公布号 |
US2014322883(A1) |
申请公布日期 |
2014.10.30 |
| 申请号 |
US201414331229 |
申请日期 |
2014.07.15 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Wei Ming-Te;Wu Wen-Chen;Kuo Lung-En;Tsao Po-Chao |
| 分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a metal-oxide semiconductor (MOS) transistor, comprising:
providing a semiconductor substrate; forming a silicon layer on the semiconductor substrate; performing a first photo-etching process on the silicon layer for forming a gate pattern; forming an epitaxial layer in the semiconductor substrate adjacent to two sides of the gate pattern; and after forming the epitaxial layer, performing a second photo-etching process on the gate pattern to form a slot in the gate pattern while using the gate pattern to physically separate the gate pattern into two gates. |
| 地址 |
Hsin-Chu City TW |
