发明名称 JUNCTION TERMINATION STRUCTURES INCLUDING GUARD RING EXTENSIONS AND METHODS OF FABRICATING ELECTRONIC DEVICES INCORPORATING SAME
摘要 An electronic device includes a semiconductor layer, a primary junction in the semiconductor layer, a lightly doped region surrounding the primary junction and a junction termination structure in the lightly doped region adjacent the primary junction. The junction termination structure has an upper boundary, a side boundary, and a corner between the upper boundary and the side boundary, and the lightly doped region extends in a first direction away from the primary junction and normal to a point on the upper boundary by a first distance that is smaller than a second distance by which the lightly doped region extends in a second direction away from the primary junction and normal to a point on the corner. At least one floating guard ring segment may be provided in the semiconductor layer outside the corner of the junction termination structure. Related methods are also disclosed.
申请公布号 US2014319646(A1) 申请公布日期 2014.10.30
申请号 US201414325558 申请日期 2014.07.08
申请人 Cree, Inc. 发明人 Henning Jason;Zhang Qingchun;Ryu Sie-Hyung
分类号 H01L29/06 主分类号 H01L29/06
代理机构 代理人
主权项 1. An electronic device, comprising: a semiconductor layer having a first conductivity type and having a first surface; a primary junction in the semiconductor layer at the first surface thereof; a junction termination structure adjacent the primary junction; and at least one floating guard ring segment in the semiconductor layer outside the junction termination structure, the floating guard ring segment having a second conductivity type that is opposite the first conductivity type.
地址 Durham NC US