| 摘要 |
A power semiconductor element (4) is bonded to an element mounting region of an insulating layer-attached metal block (3) wherein an insulating layer (2) composed of a ceramic material is directly formed on metal block (1) surfaces except the metal block upper surface, said metal block having a protruding step section (12) in the upper portion thereof, and on an upper surface portion except the element mounting region, and the insulating layer-attached metal block (3) is fixed by fitting the metal block in an eave-attached through hole (17) of a metal plate (5), thereby making it possible to manufacture, at low cost, a power semiconductor module (100) having excellent heat dissipation characteristics. Furthermore, a small power converter (300) can be manufactured at low cost by providing the power semiconductor module (100) and a heat sink (11), and fixing the power semiconductor module (100) to the heat sink (11) such that the lower surface of the metal block (1) is in contact with the heat sink (11) via the insulating layer (2). |
