An optoelectronic device comprising nanostructures of hexagonal type crystals

摘要

An optoelectronic device comprising: - a first conductive layer (22), - a second conductive layer (24), - an active layer (26) between the first conductive layer and the second conductive layer, wherein the active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group.