| 摘要 |
<p>The invention concerns a semiconductor wafer comprising the following layers in the given order:
- a monocrystalline substrate wafer (1) consisting essentially of silicon and having a (111) surface orientation,
- a monocrystalline layer (3) of Sc 2 O 3 having a (111) surface orientation,
- a monocrystalline layer (4) of ScN having a (111) surface orientation, and
- a monocrystalline layer (6) of Al z Ga 1-z N with 0 ‰¤ z ‰¤ 1 having a (0001) surface orientation. The invention also concerns a process for producing this semiconductor wafer.</p> |
