METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.

主权项

1. A method of manufacturing a semiconductor device by using a deposition apparatus in which a gaseous source supply unit configured to supply a gaseous source, a liquid source supply unit configured to supply a liquid source and a dopant source, and a reaction gas supply unit configured to supply a reaction gas are installed to be separated from each other and connected to a reaction chamber in which a reaction space is formed,
the method comprising: forming an etch stop layer on a substrate by using the gaseous source; and forming an interlayer insulation layer on the etch stop layer by vaporizing the liquid source, supplying the vaporized liquid source into the reaction chamber, and supplying the dopant source into the reaction chamber, wherein the etch stop layer and the interlayer insulation layer are formed in-situ in the reaction chamber.