发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME |
摘要 |
A method of forming a semiconductor device may include forming a contact mold layer on a substrate; forming an interconnection mold layer on the contact mold layer that includes a material having an etching selectivity with respect to the contact mold layer; forming grooves in the interconnection mold layer that extend in a first direction and expose the contact mold layer; forming holes in the contact mold layer connected to the grooves by etching a part of the contact mold layer exposed by the groove; and forming contact portions in the holes and interconnections in the groove. A diffusion coefficient of mobile atoms in the contact mold layer is greater than a diffusion coefficient of mobile atoms in a nitride. |
申请公布号 |
US2014322911(A1) |
申请公布日期 |
2014.10.30 |
申请号 |
US201414328496 |
申请日期 |
2014.07.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE YOUNG-HO;Kim Keonsoo;Back Hyunchul;Shin Jinhyun;Choi Seungwook |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of forming a semiconductor device comprising:
forming a contact mold layer on a substrate; forming an interconnection mold layer on the contact mold layer, wherein the interconnection mold layer comprises a material having an etching selectivity with respect to the contact mold layer; forming grooves in the interconnection mold layer that extend in a first direction and expose the contact mold layer; forming holes in the contact mold layer connected to the grooves by etching a part of the contact mold layer exposed by the grooves; and forming contact portions in the holes and interconnections in the grooves. |
地址 |
Suwon-si KR |