发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
Electrical characteristics of a semiconductor device including the oxide semiconductor are improved. Furthermore, a highly reliable transistor with small variation in electrical characteristics is manufactured. An oxynitride insulating film functioning as a base insulating film and a transistor in contact with the oxynitride insulating film are provided. The transistor includes an oxide semiconductor film in contact with the oxynitride insulating film functioning as a base insulating film. The total amount of gas having a mass-to-charge ratio of 30 released from the oxynitride insulating film by heat treatment and double of the amount of a gas having a mass-to-charge ratio of 32 released from the oxynitride insulating film by heat treatment is greater than or equal to 5×1015/cm2 and less than or equal to 5×1016/cm2, or greater than or equal to 5×1015/cm2 and less than or equal to 3×1016/cm2. |
申请公布号 |
US2014319514(A1) |
申请公布日期 |
2014.10.30 |
申请号 |
US201414252348 |
申请日期 |
2014.04.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
Noda Kosei;Toriumi Satoshi;Tanemura Kazuki |
分类号 |
H01L29/786;H01L29/66 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
an oxynitride insulating film; an oxide semiconductor film over and in contact with the oxynitride insulating film; a pair of electrodes in contact with the oxide semiconductor film; a gate insulating film in contact with the oxide semiconductor film; and a gate electrode overlapping the oxide semiconductor film, wherein a total of an amount of a gas having a mass-to-charge ratio of 30 released from the oxynitride insulating film by heat treatment and double of an amount of a gas having a mass-to-charge ratio of 32 released from the oxynitride insulating film by heat treatment is greater than or equal to 5×1015/cm2 and less than or equal to 5×1016/cm2. |
地址 |
Atsugi-shi JP |