发明名称 FEPT-BASED SPUTTERING TARGET
摘要 An FePt-based sputtering target has a structure in which an FePt-based alloy phase, a C phase containing unavoidable impurities, and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities, wherein C is contained in an amount of more than 0 vol % and 20 vol % or less based on the total amount of the target, the metal oxide is contained in an amount of 10 vol % or more and less than 40 vol % based on the total amount of the target, and the total content of C and the metal oxide is 20 vol % or more and 40 vol % or less based on the total amount of the target.
申请公布号 US2014318954(A1) 申请公布日期 2014.10.30
申请号 US201414328016 申请日期 2014.07.10
申请人 TANAKA KIKINZOKU KOGYO K.K. 发明人 MIYASHITA Takanobu;GOTO Yasuyuki;YAMAMOTO Takamichi;KUSHIBIKI Ryousuke;AONO Masahiro;NISHIURA Masahiro
分类号 H01J37/34 主分类号 H01J37/34
代理机构 代理人
主权项 1. An FePt-based sputtering target comprising Fe, Pt, C, and a metal oxide, wherein the FePt-based sputtering target has a structure in which an FePt-based alloy phase, a C phase containing unavoidable impurities, and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities, and wherein C is contained in an amount of more than 0 vol % and 20 vol % or less based on a total amount of the target, the metal oxide is contained in an amount of 10 vol % or more and less than 40 vol % based on the total amount of the target, and a total content of C and the metal oxide is 20 vol % or more and 40 vol % or less based on the total amount of the target.
地址 Tokyo JP