发明名称 |
FEPT-BASED SPUTTERING TARGET |
摘要 |
An FePt-based sputtering target has a structure in which an FePt-based alloy phase, a C phase containing unavoidable impurities, and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities, wherein C is contained in an amount of more than 0 vol % and 20 vol % or less based on the total amount of the target, the metal oxide is contained in an amount of 10 vol % or more and less than 40 vol % based on the total amount of the target, and the total content of C and the metal oxide is 20 vol % or more and 40 vol % or less based on the total amount of the target. |
申请公布号 |
US2014318954(A1) |
申请公布日期 |
2014.10.30 |
申请号 |
US201414328016 |
申请日期 |
2014.07.10 |
申请人 |
TANAKA KIKINZOKU KOGYO K.K. |
发明人 |
MIYASHITA Takanobu;GOTO Yasuyuki;YAMAMOTO Takamichi;KUSHIBIKI Ryousuke;AONO Masahiro;NISHIURA Masahiro |
分类号 |
H01J37/34 |
主分类号 |
H01J37/34 |
代理机构 |
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代理人 |
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主权项 |
1. An FePt-based sputtering target comprising Fe, Pt, C, and a metal oxide,
wherein the FePt-based sputtering target has a structure in which an FePt-based alloy phase, a C phase containing unavoidable impurities, and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities, and wherein C is contained in an amount of more than 0 vol % and 20 vol % or less based on a total amount of the target, the metal oxide is contained in an amount of 10 vol % or more and less than 40 vol % based on the total amount of the target, and a total content of C and the metal oxide is 20 vol % or more and 40 vol % or less based on the total amount of the target. |
地址 |
Tokyo JP |