发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a composition of a semiconductor device including a diode built-in IGBT element, which can detect an operation of the diode element more successfully even when less current flows in the diode element.SOLUTION: A semiconductor device 1 comprises: a diode built-in IGBT element 16 including a diode element 22a and an IGBT element 21a; and a sense element 18 including a diode sense element 22b and an IGBT sense element 21b. When a current does not flow in the diode sense element 22b, a switch element 40 performs an OFF operation and a second current path 52 and another current path become non-conductive. And when a current flows in the diode sense element 22b, the switch element 40 performs an ON operation, and the second current path 52 and the other current path become conductive. The semiconductor device 1 further comprises a current detection part 12 which detects a current state of the second current path 52.
申请公布号 JP2014207501(A) 申请公布日期 2014.10.30
申请号 JP20130082394 申请日期 2013.04.10
申请人 DENSO CORP 发明人 KONO KENJI
分类号 H03K17/16;G01R19/165;H02M7/48;H03K17/08;H03K17/56 主分类号 H03K17/16
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