发明名称 DISPLAY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To simplify a manufacturing process of a thin film transistor that is mounted on an EL display device.SOLUTION: A thin film transistor is manufactured as follows: a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked; a first resist mask is formed thereover; a thin-film stack body is formed by performing a first etching; a gate electrode layer is formed by performing a second etching including side etching to the thin-film stack body; and then a source electrode and a drain electrode layer and the like are formed using a second resist mask. By using this thin film transistor, an EL display device is manufactured.</p>
申请公布号 JP2014206753(A) 申请公布日期 2014.10.30
申请号 JP20140141052 申请日期 2014.07.09
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MIYAIRI HIDEKAZU;KOMORI SHIGEKI;ISA TOSHIYUKI;UMEZAKI ATSUSHI
分类号 G09F9/30;H01L21/336;H01L29/786;H01L51/50;H05B33/08 主分类号 G09F9/30
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