ELECTRONIC COMPONENT MANUFACTURING METHOD AND ELECTRODE STRUCTURE

摘要

It is an object of the present invention to provide an electronic component manufacturing method, capable of suppressing reduction in a trench opening and suppressing diffusion of a metal film embedded in a trench. An embodiment of the present invention is an electronic component manufacturing method, including the steps of: forming a first electrode constituting layer (e.g., a TiAl film) in a recess (e.g., a trench) formed in a workpiece; forming an ultrathin barrier layer (e.g., a TiAlN film) by forming a nitride layer by plasma-nitriding a surface of the first electrode constituting layer; and forming a second electrode constituting layer (e.g., an Al wiring layer) on the ultrathin barrier layer.

主权项

1. An electronic component manufacturing method, comprising:
a first step of forming a first electrode constituting layer in a recess formed in a workpiece, the recess having an opening diameter of 15 nm or less; a second step of forming a nitrided layer by nitriding a surface of the first electrode constituting layer; and a third step of forming a second electrode constituting layer on the nitrided layer, wherein in the first step, the first electrode constituting layer is formed by sputtering while a magnetic field is formed on a target surface by a magnet unit having a plurality of magnets disposed at grid points of a polygonal grid, the magnets being disposed such that adjacent magnets have opposite poles, wherein in the second step, the nitride layer is formed by nitriding the surface of the first electrode constituting layer while a magnetic field is formed on the target surface by the magnet unit, and wherein in the third step, the second electrode constituting layer is formed by sputtering while a magnetic field is formed on the target surface by the magnet unit.